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Same model may have multiple batches, images only for reference.
IXFH28N60P3 Real Image
Same model may have multiple batches, images only for reference.

IXFH28N60P3

Part No IXFH28N60P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 28A TO247
Datasheet
IXFH28N60P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 2.5mA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 3560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 695W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049411-IXFH28N60P3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFH28N60P3 CAD Model

Description

The IXFH28N60P3 is a MOSFET transistor manufactured by IXYS.

  • Power Dissipation (Max): 695W
  • Package: TO-247AD
  • Supply and Demand Status: Balanced
  • Channel Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (Id) @ 25°C: 28A
  • Gate-Source Threshold Voltage: 5V @ 2.5mA
  • Gate-Source Voltage (Max): ±30V
  • Rds On (Max) @ Id,Vgs: 260 mOhm @ 14A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.0631 $63.5679
20+ $5.7953 $115.9060
31+ $5.6142 $174.0402
43+ $5.4331 $233.6233
55+ $5.2520 $288.8600
74+ $4.7087 $348.4438
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,330 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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