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Same model may have multiple batches, images only for reference.
IXFH36N55Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFH36N55Q2

Part No IXFH36N55Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 36A TO-247
Datasheet
IXFH36N55Q2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 4mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 560W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049424-IXFH36N55Q2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH36N55Q2 CAD Model

Description

The IXYS IXFH36N55Q2 is an N-channel MOSFET from IXYS.

  • Maximum Drain-Source Voltage: 550V
  • Continuous Drain Current: 36A @ 25°C
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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