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IXFH52N50P2 Real Image IXFH52N50P2 Real Image
Same model may have multiple batches, images only for reference.
IXFH52N50P2 Real Image IXFH52N50P2 Real Image
IXFH52N50P2 Real Image IXFH52N50P2 Real Image
Same model may have multiple batches, images only for reference.

IXFH52N50P2

Part No IXFH52N50P2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 52A TO247
Datasheet
IXFH52N50P2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 4mA
Max Gate Charge 113nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 960W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049438-IXFH52N50P2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH52N50P2 CAD Model

Description

The IXYS MOSFET is a N-channel power transistor that offers a drain-source breakdown voltage of 500V and a continuous drain current of 52A @ 25°C.

  • Maximum Rds On: 120 mOhm @ 26A and 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Maximum Gate Charge: 113nC @ 10V
  • Maximum Input Capacitance: 6800pF @ 25V
  • Technology: Through Hole Mounting
  • Packaging: Tube/Rail
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 960W (Tc)

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