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IXFH60N60X3

Part No IXFH60N60X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET ULTRA JCT 600V 60A TO247 / N-Channel 600 V 60A (Tc) 625W (Tc) Through Hole TO-247
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 51mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3450 pF @ 25 V
FET Feature -
Power Dissipation (Max) 625W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number IXFH60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355001-IXFH60N60X3
Ultra Librarian 3D Model Ultra Librarian IXFH60N60X3 CAD Model

Description

The IXFH60N60X3 is an N-Channel MOSFET transistor designed for various applications. IXFH60N60X3 is from IXYS.

  • Channel Type: N-Channel
  • Vdss: 600V
  • Id: 60A
  • Rds On: 51mOhm
  • Operating Temperature: -55°C to 150°C
  • Series: HiPerFET™, Ultra X3
  • Package / Case: TO-247-3

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