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Same model may have multiple batches, images only for reference.
IXFH75N10Q Real Image
Same model may have multiple batches, images only for reference.

IXFH75N10Q

Part No IXFH75N10Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-247AD
Datasheet
IXFH75N10Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 37.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049452-IXFH75N10Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH75N10Q CAD Model

Description

The IXFH75N10Q is a high-quality MOSFET electronic component manufactured by IXYS.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A @ 25 degrees Celsius
  • Maximum Gate-Source Voltage: +/-20V
  • Rds On @ Id, Vgs: 20 mOhm @ 37.5A, 10V
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 3700pF @ 25V
  • Package: TO-247AD (IXFH)
  • Dimension: TO-247-3
  • Popularity: Medium
  • Applications: Power supply, motor control, and DC-DC converters

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