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Same model may have multiple batches, images only for reference.
IXFH80N10Q Real Image
Same model may have multiple batches, images only for reference.

IXFH80N10Q

Part No IXFH80N10Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-247AD
Datasheet
IXFH80N10Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 205681-IXFH80N10Q
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFH80N10Q CAD Model

Description

The IXYS IXFH80N10Q is a high-performance N-channel MOSFET designed for use in a variety of applications. IXYS

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Power Dissipation: 360W (Tc)
  • Package: TO-247AD (IXFH)
  • Mounting Type: Through-Hole
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 4500pF @ 25V
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.8057 $60.8912
37+ $3.1231 $115.5547
58+ $3.0249 $175.4442
79+ $2.9279 $231.3041
103+ $2.8298 $291.4694
137+ $2.5375 $347.6375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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