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IXFH80N20Q Real Image
Same model may have multiple batches, images only for reference.

IXFH80N20Q

Part No IXFH80N20Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 80A TO-247AD
Datasheet
IXFH80N20Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 4600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXFH)
Dimension TO-247-3
Win Source Part Number 1049457-IXFH80N20Q
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXFH80N20Q CAD Model

Description

The IXYS electronic component is a MOSFET with a drain-source breakdown voltage of 200V and a continuous drain current of 80A (Tc) at 25°C.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Maximum Rds On at Id,Vgs: 28 mOhm @ 500mA, 10V
  • Supply and Demand Status: Sufficient
  • Dimension: TO-247-3
  • Case/Package: TO-247AD (IXFH)
  • Maximum Gate-Source Voltage: ±20V

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