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Same model may have multiple batches, images only for reference.
IXFK34N80 Real Image
Same model may have multiple batches, images only for reference.

IXFK34N80

Part No IXFK34N80
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 34A TO-264AA
Datasheet
IXFK34N80 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 8mA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 7500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 560W (Tc)
Maximum Rds On at Id,Vgs 240 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-264AA (IXFK)
Dimension TO-264-3, TO-264AA
Win Source Part Number 1049476-IXFK34N80
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Consumer Electronics, Communications & Networking, Power Management
Ultra Librarian 3D Model Ultra Librarian IXFK34N80 CAD Model

Description

The IXFK34N80 MOSFET is a N-channel power device that can handle a maximum power dissipation of 560W (Tc).

  • Power Dissipation: 560W (Tc)
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 34A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 8mA
  • Maximum Gate Charge: 270nC @ 10V
  • Mounting Type: Through Hole
  • Package: TO-264AA (IXFK)
  • Applications: Consumer electronics, communications & networking, and power management

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