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IXFK64N60P

Name: IXFK64N60P
Brand: IXYS
SKU: 608413
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IXFK64N60P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Datasheet	IXFK64N60P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Series	HiPerFET, PolarHT
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	600V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs	200nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	12000pF @ 25V
Vgs (Maximum)	±30V
Power Dissipation (Maximum)	1040W (Tc)
Rds On (Maximum) @ Id, Vgs	96 mOhm @ 500mA, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	TO-264AA (IXFK)
Package	TO-264-3, TO-264AA
Win Source Part Number	1191101-IXFK64N60P
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Family Name	IXFK 64N60P
Introduction Date	May 07, 2006
ECCN	EAR99
Halogen Free	Unknown
Estimated EOL Date	2024
Ultra Librarian 3D Model	Ultra Librarian IXFK64N60P CAD Model

Alternative Products

Description

The IXYS MOSFET is a high-performance semiconductor that is part of the HiPerFET, PolarHT series.

Package: TO-264-3, TO-264AA
Mounting: Through-Hole
Continuous Drain Current: 64A (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Channel Type: N
Drain Source Voltage: 600V
Input Capacitance: 12000pF @ 25V
Gate Charge: 200nC @ 10V
Rds On: 96 mOhm @ 500mA, 10V
ECCN: EAR99
EOL Date: 2024

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$5.0427	$60.5124
28+	$4.1384	$115.8752
44+	$4.0090	$176.3960
60+	$3.8796	$232.7760
77+	$3.7503	$288.7731
104+	$3.3622	$349.6688

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 3,600 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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