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Same model may have multiple batches, images only for reference.
IXFK90N30 Real Image
Same model may have multiple batches, images only for reference.

IXFK90N30

Part No IXFK90N30
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 360nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 10000pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 560W (Tc)
Rds On (Maximum) @ Id, Vgs 33 mOhm @ 45A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264AA (IXFK)
Package TO-264-3, TO-264AA
Win Source Part Number 1191107-IXFK90N30
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFK90N30
Introduction Date September 27, 2000
ECCN EAR99
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IXFK90N30 CAD Model

Description

The IXFK90N30 is a MOSFET transistor that is designed for high power applications by IXYS HiPerFET.

  • Maximum Power Dissipation: 560W (Tc)
  • Maximum Continuous Drain Current: 90A (Tc)
  • Low on-resistance: 33 mOhm @ 45A, 10V
  • Gate Charge: 360nC @ 10V
  • Drain-Source Voltage: 300V
  • Gate-Source Threshold Voltage: 4V @ 8mA
  • Input Capacitance: 10000pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Series: HiPerFET series
  • Family Name: IXFK90N30
  • Win Source Part Number: 1191107-IXFK90N30
  • Recommendation: Highly recommended to purchase this component from a reliable source

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