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Same model may have multiple batches, images only for reference.
IXFN230N20T Real Image
Same model may have multiple batches, images only for reference.

IXFN230N20T

Part No IXFN230N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 220A SOT227B / N-Channel 200 V 220A (Tc) 1090W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN230N20T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Trench
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 378 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V
Power Dissipation (Max) 1090W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN230
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1189535-IXFN230N20T
Ultra Librarian 3D Model Ultra Librarian IXFN230N20T CAD Model

Description

The IXFN230N20T is a high power MOSFET transistor manufactured by IXYS.

  • Applications: Power supplies, motor controls, and lighting ballasts
  • Drain-Source Voltage: 200V
  • Continuous Drain Current: 220A
  • On-Resistance: 0.0075 ohms
  • Power Dissipation: 1090W
  • Supply and Demand: Limited
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $72.7612 $72.7612
2+ $59.7015 $119.4030
3+ $57.8359 $173.5077
4+ $55.9702 $223.8808
5+ $54.1045 $270.5225
7+ $48.5075 $339.5525
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