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Same model may have multiple batches, images only for reference.
IXFN26N100P Real Image
Same model may have multiple batches, images only for reference.

IXFN26N100P

Part No IXFN26N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 23A SOT-227B / N-Channel 1000 V 23A (Tc) 595W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN26N100P Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 390mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 11900 pF @ 25 V
Power Dissipation (Max) 595W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN26
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324616-IXFN26N100P
Ultra Librarian 3D Model Ultra Librarian IXFN26N100P CAD Model

Description

The IXFN26N100P from IXYS is a N-channel MOSFET transistor that comes in a SOT-227B package. It has a drain to source voltage of 1000V and a continuous drain current of 23A at 25°C.

  • Maximum on-resistance: 390mOhm @ 13A and 10V
  • Gate charge: 197nC @ 10V
  • Input capacitance: 11900pF @ 25V
  • Power dissipation: 595W at Tc
  • Application: chassis mount applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $96.5257 $96.5257
2+ $79.2007 $158.4014
3+ $76.7255 $230.1765
4+ $74.2503 $297.0012
5+ $71.7752 $358.8760
6+ $64.3508 $386.1048
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