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IXFN280N07

Part No IXFN280N07
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 70V 280A SOT-227B / N-Channel 70 V 280A (Tc) 600W (Tc) Chassis Mount SOT-227B
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 70 V
Current - Continuous Drain (Id) @ 25°C 280A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 420 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1323876-IXFN280N07
Ultra Librarian 3D Model Ultra Librarian IXFN280N07 CAD Model

Description

The IXYS IXFN280N07 is an N-channel MOSFET transistor that comes with chassis mount.

  • Manufacturer: IXYS
  • Drain to Source Voltage (Vdss): 70V
  • Current Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Maximum Rds On @ Id, Vgs: 5mOhm @ 120A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
  • Package: SOT-227B
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Note: This transistor is not for new designs.

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