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Same model may have multiple batches, images only for reference.
IXFN30N120P Real Image
Same model may have multiple batches, images only for reference.

IXFN30N120P

Part No IXFN30N120P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 30A SOT-227B / N-Channel 1200 V 30A (Tc) 890W (Tc) Chassis Mount SOT-227B
Datasheet
IXFN30N120P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 310 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 19000 pF @ 25 V
Power Dissipation (Max) 890W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXFN30
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324368-IXFN30N120P
Ultra Librarian 3D Model Ultra Librarian IXFN30N120P CAD Model

Description

The IXFN30N120P is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 30A (Tc) @ 25°C.

  • Maximum Rds On: 350mOhm @ 500mA and 10V
  • Gate Charge (Qg): 310 nC @ 10V
  • Input Capacitance (Ciss): 19000 pF @ 25V
  • Package: SOT-227B package
  • Case/Package: miniBLOC case/package
  • Mounting Type: chassis mount type
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
1+ $89.5105 $89.5105
2+ $86.7133 $173.4266
3+ $83.9161 $251.7483
4+ $81.1189 $324.4756
5+ $72.7273 $363.6365
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