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Same model may have multiple batches, images only for reference.
IXFN60N80P Real Image
Same model may have multiple batches, images only for reference.

IXFN60N80P

Part No IXFN60N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHV HiPerFET Power MOSFET
Datasheet
IXFN60N80P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 53A
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 250nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 18000pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 140 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Manufacturer Package SOT-227B
Package SOT-227-4, miniBLOC
Win Source Part Number 1191123-IXFN60N80P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 10
Family Name IXFN60N80P
Introduction Date May 07, 2006
ECCN EAR99
Country of Origin Republic of Korea
Halogen Free Unknown
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXFN60N80P CAD Model

Description

The IXYS IXFN60N80P is an N-channel MOSFET transistor designed for use in high-power applications.

  • Manufacturer: IXYS
  • Product Name: IXFN60N80P
  • Maximum Drain-Source Voltage: 800V
  • Continuous Drain Current: 53A
  • Maximum On-Resistance: 140mOhm @ 30A and 10V
  • Maximum Gate Charge: 250nC @ 10V
  • Package: SOT-227-4, miniBLOC case
  • RoHS: Compliant

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