The IXFN66N85X is a MOSFET (Metal Oxide) transistor manufactured by IXYS. It is a N-Channel type with a Drain to Source Voltage (Vdss) of 850 V and a Current - Continuous Drain (Id) @ 25°C of 65A (Tc).

• Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Power Dissipation (Max): 830W (Tc)
• Package: SOT-227B package
• Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
• Vgs (Max): ±30V
• Temperature Range - Operating: -55°C ~ 150°C (TJ)
• Mounting: Chassis Mount
• Application: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single applications