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Same model may have multiple batches, images only for reference.
IXFN80N50P Real Image
Same model may have multiple batches, images only for reference.

IXFN80N50P

Part No IXFN80N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 66A SOT227B
Datasheet
IXFN80N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Polar
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 12700 pF @ 25 V
Power Dissipation (Max) 700W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Base Product Number IXFN80
Standard Package 10 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 846994-IXFN80N50P
Ultra Librarian 3D Model Ultra Librarian IXFN80N50P CAD Model

Description

The IXFN80N50P is a N-Channel MOSFET transistor from IXYS.

  • Series: HiPerFET™ and Polar
  • Drain to Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 66A @ 25°C
  • Rds On (Max): 65mOhm @ 500mA and 10V
  • Gate Charge (Qg): 195nC @ 10V
  • Power Dissipation: 700W
  • Mounting: Chassis Mount
  • Package: SOT-227-4 miniBLOC
  • Temperature Range: -55°C to 150°C
  • Product Status: Active
  • Applications: Power supplies, motor control, and inverters

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8+ $38.4188 $307.3504
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