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Same model may have multiple batches, images only for reference.
IXFP130N10T2 Real Image
Same model may have multiple batches, images only for reference.

IXFP130N10T2

Part No IXFP130N10T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 130A TO220AB  /  N-Channel 100 V 130A (Tc) 360W (Tc) Through Hole TO-220-3
Datasheet
IXFP130N10T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, TrenchT2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP130
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1224689-IXFP130N10T2
Ultra Librarian 3D Model Ultra Librarian IXFP130N10T2 CAD Model

Description

The IXYS IXFP130N10T2 is a MOSFET (Metal Oxide) transistor that is designed for discrete semiconductor products>transistors - FETs, MOSFETs - Single category. Bold the product name (e.g., BAV99S,135 → IXFP130N10T2) and manufacturer (e.g., Nexperia USA Inc. → IXYS).

  • Series: HiPerFET™, TrenchT2™
  • Package: TO-220-3
  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 130A (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA

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