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IXFP16N50P

Name: IXFP16N50P
Brand: IXYS
SKU: 165676
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFP16N50P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 16A TO-220
Datasheet	IXFP16N50P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube/Rail
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	500V
Continuous Drain Current at 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5.5V @ 2.5mA
Max Gate Charge	43nC @ 10V
Max Input Capacitance	2250pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	300W (Tc)
Maximum Rds On at Id,Vgs	400 mOhm @ 8A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	112821-IXFP16N50P
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IXFP16N50P CAD Model

Alternative Products

Description

The IXFP16N50P is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 500V
Continuous Drain Current @ 25°C: 16A (Tc)
Maximum Rds On @ Id,Vgs: 400 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package Type: TO-220AB
Dimension: TO-220-3
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete semiconductor products
Status: Active
Temperature Range: -55°C to 150°C (TJ)
ECCN: EAR99
Supply and Demand Status: Balance

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