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Same model may have multiple batches, images only for reference.
IXFP20N50P3 Real Image
Same model may have multiple batches, images only for reference.

IXFP20N50P3

Part No IXFP20N50P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A TO220AB  /  N-Channel 500 V 8A (Tc) 380W (Tc) Through Hole TO-220-3
Datasheet
IXFP20N50P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Polar3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 380W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -IXFP20N50P3
Standard Package 50
Win Source Part Number 1028158-IXFP20N50P3
Ultra Librarian 3D Model Ultra Librarian IXFP20N50P3 CAD Model

Description

The IXYS IXFP20N50P3 is a N-channel MOSFET transistor with a drain-source voltage of 500V and a continuous drain current of 8A @ 25°C.

  • Manufacturer: IXYS
  • Product Name: IXFP20N50P3
  • Type: N-channel MOSFET transistor
  • Drain-Source Voltage: 500V
  • Continuous Drain Current @ 25°C: 8A
  • Maximum On-Resistance @ 10A and 10V: 300mOhm
  • Gate Threshold Voltage @ 1.5mA: 5V
  • Package: TO-220-3
  • Maximum Power Dissipation @ Tc: 380W
  • Gate Charge @ 10V: 36nC
  • Operating Temperature Range: -55°C to 150°C

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