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Same model may have multiple batches, images only for reference.
IXFP56N30X3 Real Image
Same model may have multiple batches, images only for reference.

IXFP56N30X3

Part No IXFP56N30X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 56A TO220AB / N-Channel 300 V 56A (Tc) 320W (Tc) Through Hole TO-220-3
Datasheet
IXFP56N30X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 25 V
Power Dissipation (Max) 320W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXFP56
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1350286-IXFP56N30X3
Ultra Librarian 3D Model Ultra Librarian IXFP56N30X3 CAD Model

Description

The IXFP56N30X3 is a MOSFET transistor from IXYS that is designed for use in discrete semiconductor products such as transistors, FETs, and MOSFETs. IXYS

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 300 V
  • Power Dissipation (Max): 320W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V

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