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Same model may have multiple batches, images only for reference.
IXFR66N50Q2 Real Image
Same model may have multiple batches, images only for reference.

IXFR66N50Q2

Part No IXFR66N50Q2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 50A ISOPLUS247
Datasheet
IXFR66N50Q2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 8mA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 9125pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 500W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ISOPLUS247
Dimension ISOPLUS247
Win Source Part Number 205690-IXFR66N50Q2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFR66N50Q2 CAD Model

Description

The IXFR66N50Q2 is a N-channel MOSFET with a maximum power dissipation of 500W (Tc).

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 8mA
  • Maximum Gate Charge: 200nC @ 10V
  • Mounting: Through Hole
  • Package: ISOPLUS247
  • Status: Obsolete
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On @ Id, Vgs: 85 mOhm @ 33A, 10V
  • Commonly Used In: Various discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $65.7120 $65.7120
2+ $53.9175 $107.8350
3+ $52.2326 $156.6978
4+ $50.5477 $202.1908
6+ $48.8628 $293.1768
7+ $43.8080 $306.6560
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