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Same model may have multiple batches, images only for reference.
IXFT26N50Q Real Image
Same model may have multiple batches, images only for reference.

IXFT26N50Q

Part No IXFT26N50Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerFET Power MOSFETs
Datasheet
IXFT26N50Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3900pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 200 mOhm @ 13A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Win Source Part Number 1191138-IXFT26N50Q
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXFT26N50Q
Introduction Date September 27, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXFT26N50Q CAD Model

Description

The IXFT26N50Q is a HiPerFET series MOSFET manufactured by IXYS.

  • Current-Continuous Drain: 26A @ 25°C
  • Maximum Power Dissipation: 300W
  • Maximum Rds on: 200 mOhm @ 13A and 10V
  • Drain-Source Voltage: 500V
  • Gate-Source Threshold Voltage: 4.5V @ 4mA
  • Gate Charge Maximum: 95nC @ 10V
  • Input Capacitance Maximum: 3900pF @ 25V
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Operating Temperature: -55°C to 150°C (TJ)
  • MOSFET Type: N-channel
  • Drive Voltage: 10V

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