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Same model may have multiple batches, images only for reference.
IXFX210N30X3
Same model may have multiple batches, images only for reference.

IXFX210N30X3

Part No IXFX210N30X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 210A PLUS247-3 / N-Channel 300 V 210A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Datasheet
IXFX210N30X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 375 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 24200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXFX210
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355057-IXFX210N30X3
Ultra Librarian 3D Model Ultra Librarian IXFX210N30X3 CAD Model

Description

The IXYS 1355057-IXFX210N30X3 is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 300V and a continuous drain current (Id) of 210A.

  • Vdss: 300V
  • Id: 210A
  • Rds On: 5.5mOhm @ 105A, 10V
  • Vgs(th): 4.5V @ 8mA
  • Qg: 375nC @ 10V
  • Ciss: 24200pF @ 25V
  • Power Dissipation: 1250W
  • Series: HiPerFET™, Ultra X3
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $58.2872 $58.2872
3+ $47.8254 $143.4762
4+ $46.3308 $185.3232
5+ $44.8363 $224.1815
6+ $43.3418 $260.0508
8+ $38.8581 $310.8648
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