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IXGA30N120B3

Part No IXGA30N120B3
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 60A 300W TO263  /  IGBT PT 1200 V 60 A 300 W Surface Mount TO-263AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series GenX3™
Package Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Power - Max 300 W
Switching Energy 3.47mJ (on), 2.16mJ (off)
Input Type Standard
Gate Charge 87 nC
Td (on/off) @ 25°C 16ns/127ns
Test Condition 960V, 30A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AA
Base Product Number IXGA30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1178128-IXGA30N120B3
Ultra Librarian 3D Model Ultra Librarian IXGA30N120B3 CAD Model

Description

The IXYS IGBT is a high-quality transistor that is widely used in electronic devices and equipment.

  • Win Source Part Number: 1178128-IXGA30N120B3
  • Power - Max: 300 W
  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
  • Switching Energy: 3.47mJ (on), 2.16mJ (off)
  • Gate Charge: 87 nC
  • td (on/off) @ 25 degrees Celsius: 16ns/127ns
  • Test Condition: 960V, 30A, 5Ohm, 15V
  • Case / Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Temperature Range - Operating: -55 degrees Celsius to 150 degrees Celsius (TJ)
  • REACH: Unaffected
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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