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Same model may have multiple batches, images only for reference.
IXGT32N170 IXYS
Same model may have multiple batches, images only for reference.

IXGT32N170

Part No IXGT32N170
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1700V 75A 350W TO268
Datasheet
IXGT32N170 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series -
Package Tube
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 32A
Power - Max 350 W
Switching Energy 11mJ (off)
Input Type Standard
Gate Charge 155 nC
Td (on/off) @ 25°C 45ns/270ns
Test Condition 1020V, 32A, 2.7Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-268AA
Base Product Number IXGT32
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378709-IXGT32N170
Ultra Librarian 3D Model Ultra Librarian IXGT32N170 CAD Model

Description

The 1378709-IXGT32N170 is a single IGBT (Insulated Gate Bipolar Transistor) designed for discrete semiconductor applications and is manufactured by IXYS.

  • Operating Temperature: -55°C to 150°C (TJ)
  • Voltage Rating: 1700V
  • Collector Current Rating: 75A
  • Input Type: standard
  • Technology: NPT (Non-Punch Through)
  • Mounting Type: surface mountable
  • Package: TO-268-3, D³Pak
  • Product Status: active

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11+ $28.7207 $315.9277
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