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Same model may have multiple batches, images only for reference.
IXTA08N50D2 Real Image
Same model may have multiple batches, images only for reference.

IXTA08N50D2

Part No IXTA08N50D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 800MA TO263 / N-Channel 500 V 800mA (Tc) 60W (Tc) Surface Mount TO-263AA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Rds On (Max) @ Id, Vgs 4.6Ohm @ 400mA, 0V
Gate Charge (Qg) (Max) @ Vgs 12.7 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 312 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA08
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1351618-IXTA08N50D2
Ultra Librarian 3D Model Ultra Librarian IXTA08N50D2 CAD Model

Description

The IXTA08N50D2 is a depletion mode N-channel MOSFET designed for high voltage and high-speed switching applications.

  • Drain-Source Voltage: 500V
  • Power Dissipation: 60W (Tc)
  • FET Feature: Depletion Mode
  • Maximum Gate-Source Voltage: ±20V
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 150°C (TJ)
  • Input Capacitance: 312 pF @ 25 V
  • Continuous Drain Current: 800mA (Tc)

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