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IXTA102N15T-TRL

Part No IXTA102N15T-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 102A TO263  /  N-Channel 150 V 102A (Tc) 455W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Trench
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 25 V
Power Dissipation (Max) 455W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IXTA102
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 238-IXTA102N15T-TRLTR
Standard Package 800
Win Source Part Number 1201166-IXTA102N15T-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA102N15T-TRL CAD Model

Description

The IXYS IXTA102N15T-TRL is an N-channel MOSFET transistor with a trench series package designed by IXYS.

  • Drain to Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 102A (Tc) @ 25°C
  • Maximum On-Resistance: 18mOhm @ 51A and 10V
  • Gate Charge (Qg): 87nC @ 10V
  • Input Capacitance (Ciss): 5220pF @ 25Vds
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Technology: Surface Mount
  • Application: Discrete Semiconductor Products

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