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IXTA130N10T

Part No IXTA130N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 104nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5080pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 360W (Tc)
Rds On (Maximum) @ Id, Vgs 9.1 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1191231-IXTA130N10T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTA130N10T
Introduction Date December 14, 2006
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTA130N10T CAD Model

Description

The IXTA130N10T is a N-channel MOSFET transistor from the TrenchMV series manufactured by IXYS.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Continuous Drain Current (Id) (Maximum): 130A (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Gate Charge (Qg) (Maximum) @ Vgs: 104nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5080pF @ 25V
  • Product Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Alternative Parts: SQM120N10-09_GE3, BUK9610-100B, BUK7610-100B

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3178 $58.4958
27+ $4.3634 $117.8118
41+ $4.2270 $173.3070
57+ $4.0907 $233.1699
74+ $3.9543 $292.6182
98+ $3.5452 $347.4296
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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