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IXTA26P10T

Name: IXTA26P10T
Brand: IXYS
SKU: 464954
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IXTA26P10T
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 100V 26A TO-263
Datasheet	IXTA26P10T Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube/Rail
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4.5V @ 250μA
Max Gate Charge	52nC @ 10V
Max Input Capacitance	3820pF @ 25V
Maximum Gate-Source Voltage	±15V
Power Dissipation (Max)	150W (Tc)
Maximum Rds On at Id,Vgs	90 mOhm @ 13A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	TO-263 (IXTA)
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	1049728-IXTA26P10T
Popularity	Medium
Supply and Demand Status	Sufficient
Quantity per package	50
Ultra Librarian 3D Model	Ultra Librarian IXTA26P10T CAD Model

Alternative Products

Description

The IXYS 1049728-IXTA26P10T is a P-channel MOSFET that has a power dissipation of 150W (Tc).

Packaging: Tube/Rail
Mounting: SMD (SMT)
Drive Voltage: 10V
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 26A (Tc) @ 25°C
Gate-Source Threshold Voltage: 4.5V @ 250μA
Maximum Gate Charge: 52nC @ 10V
Maximum Input Capacitance: 3820pF @ 25V
Temperature Range: -55°C to 150°C (TJ)
Case/Package: TO-263 (IXTA)
Popularity: Medium
Supply and Demand Status: Sufficient
Quantity per Package: 50

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
110+	$0.4627	$50.8970
265+	$0.3797	$100.6205
410+	$0.3678	$150.7980
565+	$0.3560	$201.1400
730+	$0.3441	$251.1930
975+	$0.3085	$300.7875

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 11 pieces

MOQ: 110 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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