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Same model may have multiple batches, images only for reference.
IXTA28P065T Real Image
Same model may have multiple batches, images only for reference.

IXTA28P065T

Part No IXTA28P065T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 65V 28A TO-263
Datasheet
IXTA28P065T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 65V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 2030pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1049729-IXTA28P065T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTA28P065T CAD Model

Description

The IXTA28P065T is a P-channel MOSFET transistor from IXYS.

  • Device Type: P-channel MOSFET
  • Drain to Source Breakdown Voltage: 65V
  • Continuous Drain Current: 28A (Tc) @ 25°C
  • Package: TO-263 (IXTA)
  • Mounting Type: Surface Mount
  • Package Type: Tube/Rail
  • Power Dissipation: 83W (Tc)
  • Vgs(th): 4.5V @ 250μA
  • ECCN: EAR99
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5566 $58.8018
56+ $2.0979 $117.4824
86+ $2.0323 $174.7778
118+ $1.9667 $232.0706
152+ $1.9011 $288.9672
204+ $1.7045 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,350 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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