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IXTA52P10P

Name: IXTA52P10P
Brand: IXYS
SKU: 1066197
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IXTA52P10P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 100V 52A TO263 / P-Channel 100 V 52A (Tc) 300W (Tc) Surface Mount TO-263AA
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	IXYS
Series	PolarP™
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	50mOhm @ 52A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2845 pF @ 25 V
Power Dissipation (Max)	300W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-263AA
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	IXTA52
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Win Source Part Number	1066197-IXTA52P10P
Ultra Librarian 3D Model	Ultra Librarian IXTA52P10P CAD Model

Alternative Products

Description

The IXYS IXTA52P10P is a P-Channel MOSFET transistor with a drain to source voltage of 100V and a continuous drain current of 52A @ 25°C.

Drain to Source Voltage: 100V
Continuous Drain Current: 52A @ 25°C
Maximum Gate Threshold Voltage: 4.5V @ 250μA
Maximum Gate Charge: 60nC @ 10V
Maximum On-State Resistance: 50mOhm @ 52A and 10V
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Ideal for: applications such as power supplies, motor control, and lighting control.

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