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IXTA56N15T

Part No IXTA56N15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Enhancement Mode Avalanche Rated
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchHV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2250pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 36 mOhm @ 28A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS State Request Verification
Win Source Part Number 1191243-IXTA56N15T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTA56N15T
Introduction Date March 05, 2007
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTA56N15T CAD Model

Description

The IXYS IXTA56N15T is a MOSFET IC manufactured by IXYS.

  • Series: TrenchHV
  • Maximum Power Dissipation: 300W (Tc)
  • Current - Continuous Drain @ 25°C: 56A (Tc)
  • Drain-Source Voltage: 150V
  • Gate Charge (Qg) (maximum) @ Vgs: 34nC @ 10V
  • Channel Type: N
  • Maximum Vgs: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.3197 $53.1152
37+ $2.7239 $100.7843
57+ $2.6388 $150.4116
79+ $2.5537 $201.7423
102+ $2.4685 $251.7870
136+ $2.2132 $300.9952
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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