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Same model may have multiple batches, images only for reference.
IXTA76P10T-TRL Real Image
Same model may have multiple batches, images only for reference.

IXTA76P10T-TRL

Part No IXTA76P10T-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 76A TO263 / P-Channel 100 V 76A (Tc) 298W (Tc) Surface Mount TO-263 (D2Pak)
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchP™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 13700 pF @ 25 V
Power Dissipation (Max) 298W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA76
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351303-IXTA76P10T-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA76P10T-TRL CAD Model

Description

The IXTA76P10T-TRL is a P-Channel MOSFET transistor from IXYS.

  • Series: TrenchP™
  • Device Category: Discrete Semiconductor Products
  • Product Type: FETs, MOSFETs, Single FETs
  • Power Dissipation: 298W (Tc)
  • Drain-to-Source Voltage (Vdss): 100V
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Voltage (Vgs): ±15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Current-Continuous Drain (Id): 76A (Tc)
  • On-Resistance (Rds On): 25mOhm @ 38A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V

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