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Same model may have multiple batches, images only for reference.
IXTF02N450 Real Image
Same model may have multiple batches, images only for reference.

IXTF02N450

Part No IXTF02N450
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 4500V 200MA I4PAC / N-Channel 4500 V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™
Datasheet
IXTF02N450 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 4500 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 256 pF @ 25 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS i4-PAC™
Package / Case i4-Pac™-5 (3 Leads)
Base Product Number IXTF02
Standard Package 25
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346646-IXTF02N450
Ultra Librarian 3D Model Ultra Librarian IXTF02N450 CAD Model

Description

IXYS's IXTF02N450 is a high-performance MOSFET transistor that is designed for use in various electronic devices.

  • Features: high drain to source voltage and a low power dissipation
  • Ideal component for: high-power applications
  • Ease of Use: easy to install and use, and it is designed to meet the needs of specific electronic devices
  • Ideal for use in: various applications
  • Reliable Component: delivers high performance and efficiency

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