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Same model may have multiple batches, images only for reference.
IXTF2N300P3
Same model may have multiple batches, images only for reference.

IXTF2N300P3

Part No IXTF2N300P3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 3000V 1.6A I4PAC / N-Channel 3000 V 1.6A (Tc) 160W (Tc) Through Hole ISOPLUS i4-PAC™
Datasheet
IXTF2N300P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar P3™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 3000 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1890 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS i4-PAC™
Package / Case ISOPLUSi5-Pak™
Base Product Number IXTF2
Standard Package 25
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346824-IXTF2N300P3
Ultra Librarian 3D Model Ultra Librarian IXTF2N300P3 CAD Model

Description

The IXTF2N300P3 is a N-channel MOSFET transistor designed for use in Discrete Semiconductor Products.

  • Drain to Source Voltage (Vdss): 3000 V
  • Power Dissipation (Max): 160W (Tc)
  • Mounting Type: Through Hole
  • Package: ISOPLUSi5-Pak™
  • Series: Polar P3™
  • Gate to Source Voltage (Vgs): ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Current - Continuous Drain (Id): 1.6A (Tc)
  • Rds On (Max): 21Ohm @ 1A, 10V

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