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Same model may have multiple batches, images only for reference.
IXTH182N055T Real Image
Same model may have multiple batches, images only for reference.

IXTH182N055T

Part No IXTH182N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 182A TO-247
Datasheet
IXTH182N055T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 182A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 4850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049776-IXTH182N055T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH182N055T CAD Model

Description

The IXYS IXTH182N055T is a N-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 182A at 25°C.

  • Maximum Power Dissipation: 360W
  • Maximum Gate-Source Voltage: ±20V
  • Mounting: through a hole
  • Package: TO-247-3 dimension
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 114nC @ 10V
  • Maximum Input Capacitance: 4850pF @ 25V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Suitable for: use in power management applications

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