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PMPB20UN,115

Part No PMPB20UN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.6A 6DFN / Trans MOSFET N-CH 20V 6.6A 6-Pin DFN-MD EP T/R
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Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 7.1nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 460pF @ 10V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.7W (Ta), 12.5W (Tc)
Rds On (Maximum) @ Id, Vgs 25 mOhm @ 6.6A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 6-DFN2020MD (2x2)
Package 6-UDFN Exposed Pad
Win Source Part Number 792433-PMPB20UN,115
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Family Name PMPB20UN
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PMPB20UN,115 CAD Model

Description

The PMPB20UN,115 is a cutting-edge MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the electronic components industry. This product is renowned for its high efficiency and reliability, making it an excellent choice for a wide range of applications.

Key Features

  • Type: N-channel Trench MOSFET
  • Package: DFN2020MD-6 (SOT1118)
  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 100A
  • R<sub>DS(on): Very low on-state resistance
  • Gate Charge (Q<sub>G): Low
  • Power Dissipation (P<sub>D): High
  • Operating Temperature: -55°C to +175°C

Applications

The PMPB20UN,115 is designed to be versatile, catering to a broad spectrum of applications. Its performance characteristics make it suitable for:

  • Power management tasks
  • DC/DC converters
  • Load switches
  • Battery protection circuits
  • Motor control circuits
  • High-speed switching applications

Product Benefits

The PMPB20UN,115 offers numerous advantages to designers and engineers. Its low on-state resistance ensures efficient power handling and minimizes losses. The MOSFET's high continuous drain current rating allows it to handle substantial loads, which is critical for power-intensive applications. Additionally, the low gate charge facilitates faster switching, reducing transition losses and improving overall performance.

Quality and Reliability

NXP Semiconductors is committed to delivering products that meet the highest standards of quality and reliability. The PMPB20UN,115 is no exception, undergoing rigorous testing to ensure it performs under the most demanding conditions. Its wide operating temperature range guarantees stability across various environments, making it a reliable component for industrial, automotive, and consumer electronics.

Environmental Compliance

The PMPB20UN,115 is produced with environmental considerations in mind. It complies with RoHS regulations, which restrict the use of certain hazardous substances in electronic equipment. This commitment to sustainability ensures that the product is not only advanced in technology but also conscientious of its environmental impact.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5650 $62.6000
90+ $1.2844 $115.5960
140+ $1.2439 $174.1460
195+ $1.2035 $234.6825
250+ $1.1631 $290.7750
335+ $1.0430 $349.4050
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 950 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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