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IXTH1N300P3HV

Name: IXTH1N300P3HV
Brand: IXYS
SKU: WS1202370
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTH1N300P3HV
Manufacturer	IXYS
Catalog	FETs - Single
Description	MOSFET N-CH 3000V 1A TO247HV
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Win Source Part Number	WS1202370-IXTH1N300P3HV
Manufacturer	IXYS
Category	Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series	Polar P3™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	3000 V
Power Dissipation (Max)	195W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Ultra Librarian 3D Model	Ultra Librarian IXTH1N300P3HV CAD Model

Alternative Products

Description

The Polar P3™ N-Channel MOSFET is a high-performance transistor manufactured by IXYS.

Product Category: Discrete Semiconductor Products
Application: FETs and MOSFETs
Technology: MOSFET
Package: Tube
Drain to Source Voltage (Vdss): 3000V
Power Dissipation: 195W
Operating Temperature: -55°C to 150°C
Component Status: Active

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1+	$78.8960	$78.8960
2+	$76.4305	$152.8610
3+	$73.9650	$221.8950
4+	$71.4995	$285.9980
5+	$64.1030	$320.5150

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 1,430 pieces

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