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Same model may have multiple batches, images only for reference.
IXTH450P2 Real Image
Same model may have multiple batches, images only for reference.

IXTH450P2

Part No IXTH450P2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A TO247
Datasheet
IXTH450P2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 2530pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 330 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049810-IXTH450P2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH450P2 CAD Model

Description

IXTH450P2 is an N-Channel MOSFET from IXYS.

  • Package: TO-247 (IXTH)
  • Mounting: Through-Hole
  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 16A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 43nC @ 10V
  • Maximum Input Capacitance: 2530pF @ 25V
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 300W (Tc)

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