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IXTH48N20T

Part No IXTH48N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 48A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 48A (Tc)
Power Dissipation (Max) 275W (Tc)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049812-IXTH48N20T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH48N20T CAD Model

Description

The IXYS MOSFET is a N-Channel polarized electronic component, designed for use in Discrete Semiconductor Products.

  • Technology: Through Hole
  • Case/Package: TO-247 (IXTH)
  • Power Dissipation (Max): 275W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 48A (Tc) @ 25°C

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