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IXTH50N25T

Part No IXTH50N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 50A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 400W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049817-IXTH50N25T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH50N25T CAD Model

Description

The IXTH50N25T is a MOSFET technology-based electronic component manufactured by IXYS.

  • Win Source Part Number: 1049817
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 400W (Tc)
  • Mounting: Through Hole
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7271 $61.4523
30+ $3.8787 $116.3610
47+ $3.7574 $176.5978
64+ $3.6363 $232.7232
83+ $3.5151 $291.7533
110+ $3.1515 $346.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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