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IXTH62N65X2

Part No IXTH62N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 62A TO247 / N-Channel 650 V 62A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5940 pF @ 25 V
Power Dissipation (Max) 780W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
Base Product Number IXTH62
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346820-IXTH62N65X2
Ultra Librarian 3D Model Ultra Librarian IXTH62N65X2 CAD Model

Description

IXTH62N65X2 is an N-channel MOSFET transistor from IXYS.

  • Series: Ultra X2
  • Product: Discrete Semiconductor
  • Drain to Source Voltage (Vdss): 650 V
  • Power Dissipation: 780W (Tc)
  • Mounting Type: Through a Hole
  • Package: TO-247-3
  • Vgs (Max): ±30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Continuous Drain Current (Id): 62A (Tc)
  • On-Resistance (Rds On): 52mOhm @ 31A, 10V
  • Gate Charge (Qg): 104 nC @ 10 V
  • Input Capacitance (Ciss): 5940 pF @ 25 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0875 $64.3500
9+ $13.2000 $118.8000
14+ $12.7875 $179.0250
19+ $12.3751 $235.1269
25+ $11.9625 $299.0625
33+ $10.7250 $353.9250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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