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Same model may have multiple batches, images only for reference.
IXTH67N10 Real Image
Same model may have multiple batches, images only for reference.

IXTH67N10

Part No IXTH67N10
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 67A TO247AD
Datasheet
IXTH67N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 33.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 205704-IXTH67N10
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH67N10 CAD Model

Description

The IXYS MOSFET is a N-channel power transistor that has a maximum power dissipation of 300W.

  • Maximum Power Dissipation: 300W
  • Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 67A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 4mA
  • Maximum Gate Charge: 260nC @ 10V
  • Maximum Input Capacitance: 4500pF @ 25V
  • Package: TO-247-3 package
  • Maximum Rds On: 25 mOhm @ 33.5A, 10V

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Quantity Unit Price Ext. Price
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11+ $10.5601 $116.1611
17+ $10.2300 $173.9100
24+ $9.9000 $237.6000
31+ $9.5700 $296.6700
41+ $8.5800 $351.7800
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