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IXTH6N120

Part No IXTH6N120
Manufacturer IXYS
Catalog FETs - Single
Description High Voltage Power MOSFET | MOSFET N-CH 1200V 6A TO-247AD
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1200V
Id - Continuous Drain Current 6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 2.6Ohm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 56nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1950pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191260-IXTH6N120
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH6N120 CAD Model

Description

The IXYS MOSFET is a high-quality electronic component that is perfect for use in a variety of applications.

  • Vds - Drain-Source Breakdown Voltage: 1200V
  • Id - Continuous Drain Current: 6A
  • Rds On (Maximum) @ Id, Vgs: 2.6Ohm @ 3A, 10V
  • Gate charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
  • Temperature Range: -55°C ~ 150°C
  • Power Dissipation (Maximum): 300W
  • Mounting Style: Through-hole
  • Supplier Device Package: TO-247 (IXTH)

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.6879 $65.0637
6+ $17.7952 $106.7712
9+ $17.2391 $155.1519
12+ $16.6830 $200.1960
16+ $16.1269 $258.0304
21+ $14.4586 $303.6306
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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