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Same model may have multiple batches, images only for reference.
IXTH75N10 Real Image
Same model may have multiple batches, images only for reference.

IXTH75N10

Part No IXTH75N10
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO247AD
Datasheet
IXTH75N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 4mA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 37.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049831-IXTH75N10
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH75N10 CAD Model

Description

The IXTH75N10 is a medium popularity MOSFET manufactured by IXYS.

  • Applications: Power supplies, motor control, and lighting
  • Thermal Stability: Good
  • Power Dissipation: Can handle high power dissipation up to 300W (Tc)
  • On-Resistance: Low
  • Switching Speed: Fast
  • Choice For: Applications that require high efficiency and reliability

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