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Same model may have multiple batches, images only for reference.
IXTI10N60P Real Image
Same model may have multiple batches, images only for reference.

IXTI10N60P

Part No IXTI10N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO262 / N-Channel 600 V 10A (Tc) 200W (Tc) Through Hole TO-262 (I2PAK)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262 (I2PAK)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IXTI10
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346812-IXTI10N60P
Ultra Librarian 3D Model Ultra Librarian IXTI10N60P CAD Model

Description

The IXYS 1346812-IXTI10N60P is a discrete semiconductor product that is commonly used in electronic circuits that require an N-channel MOSFET.

  • Manufacturer: IXYS
  • Maximum Drain to Source Voltage: 600V
  • Continuous Drain Current: 10A (Tc)
  • Maximum Rds On: 740mOhm @ 5A and 10V
  • Gate Charge: 32 nC @ 10 V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Mounting Type: Through Hole

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