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Same model may have multiple batches, images only for reference.
IXTK100N25P Real Image
Same model may have multiple batches, images only for reference.

IXTK100N25P

Part No IXTK100N25P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHT Power MOSFET N-Channel Enhancement Mode
Datasheet
IXTK100N25P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 185nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6300pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 600W (Tc)
Rds On (Maximum) @ Id, Vgs 27 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264 (IXTK)
Package TO-264-3, TO-264AA
Win Source Part Number 1191263-IXTK100N25P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTK100N25P
Introduction Date February 01, 2004
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTK100N25P CAD Model

Description

The IXYS 1191263-IXTK100N25P is an N-Channel MOSFET transistor with a drain-source voltage of 250V and a continuous drain current of 100A.

  • Type: N-Channel MOSFET
  • Drain-Source Voltage: 250V
  • Continuous Drain Current: 100A
  • Maximum On-State Resistance: 27mOhm @ 500mA and 10V gate-source voltage
  • Gate-Source Voltage Threshold: 5V @ 250μA
  • Gate Charge: 185nC @ 10V
  • Package: TO-264-3, TO-264AA
  • Power Dissipation: Up to 600W
  • Suitable for: High-frequency power supplies, motor control, and DC-DC converters
  • Supply and Demand Status: Limited

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3+ $21.8969 $65.6907
7+ $17.9667 $125.7669
10+ $17.4053 $174.0530
14+ $16.8438 $235.8132
18+ $16.2823 $293.0814
24+ $14.5980 $350.3520
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