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Same model may have multiple batches, images only for reference.
IXTK102N30P Real Image
Same model may have multiple batches, images only for reference.

IXTK102N30P

Part No IXTK102N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHT Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 500μA
Gate Charge (Qg) (Maximum) @ Vgs 224nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 700W (Tc)
Rds On (Maximum) @ Id, Vgs 33 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264 (IXTK)
Package TO-264-3, TO-264AA
RoHS State Request Verification
Win Source Part Number 1191264-IXTK102N30P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTK102N30P
Introduction Date February 01, 2004
ECCN EAR99
Halogen Free Unknown
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTK102N30P CAD Model

Description

The IXYS IXTK102N30P is an N-channel MOSFET transistor with a maximum drain source voltage of 300V and a continuous drain current of 102A (Tc).

  • Manufacturer: IXYS
  • Product Name: IXTK102N30P
  • Maximum Drain Source Voltage: 300V
  • Continuous Drain Current: 102A (Tc)
  • Maximum Power Dissipation: 700W (Tc)
  • Gate Charge: 224nC @ 10V
  • Package: TO-264-3, TO-264AA case
  • Maximum Input Capacitance: 7500pF @ 25Vds
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Limited

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