The IXTK120N25 is a N-Channel MOSFET from IXYS. It is designed with a drain-source breakdown voltage of 250V and a continuous drain current of 120A. The maximum Rds On is 20mOhm @ 500mA and 10V. It has a gate-source voltage of ±20V and an input capacitance of 7700pF @ 25V. The IXTK120N25 is packaged in TO-264 (IXTK) and is suitable for use in Discrete Semiconductor Products. It has a power dissipation of 730W and a drive voltage of 10V. The temperature range for operating this MOSFET is between -55°C to 150°C. in the open market. The manufacturer pack quantity is 30 and it has an MSL level of 1 (unlimited).